Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN

نویسندگان

چکیده

Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation remains a challenge. The lattice location 27Mg is investigated GaN different types as function temperature and fluence at CERN's ISOLDE facility. amphoteric nature Mg elucidated, i.e., concurrent occupation substitutional Ga interstitial sites: following room ultra-low (≈2 × 1010 cm−2) implantation, fraction highest (20–24%) pre-doped with stable during growth, lowest (2–6%) n-GaN:Si, while undoped shows an intermediate 10–12%. Both for p- n-GaN prolonged implantations cause to approach levels found GaN. Implanting above 400 °C progressively converts sites due onset migration (estimated energy 1.5–2.3 eV) combination vacancies. In all sample types, 1014 cm−2 result >95% Mg. Ion hence very method introduce into sites, challenges toward high implanted are not related lack incorporation.

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ژورنال

عنوان ژورنال: Advanced electronic materials

سال: 2021

ISSN: ['2199-160X']

DOI: https://doi.org/10.1002/aelm.202100345